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| UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT62256C is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62256C is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT62256C operates from a single 5V power supply and all inputs and outputs are fully TTL compatible UT62256C FEATURES Access time : 35/70ns (max.) Low power consumption: Operating : 40/30 mA (typical.) Standby : 3mA (typical) normal 2uA (typical) L-version 1uA (typical) LL-version Single 5V power supply All inputs and outputs are TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) Package : 28-pin 600 mil PDIP 28-pin 330 mil SOP 28-pin 8mmx13.4mm STSOP FUNCTIONAL BLOCK DIAGRAM A4 A3 A14 A13 A12 A7 A6 A5 A8 ROW DECODER PIN CONFIGURATION A14 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE . . . MEMORY ARRAY 512 ROW x 512 COLUMNS S A7 A13 A8 A9 A11 OE VCC VSS A6 A5 A4 A3 A2 A1 A0 I/O1 UT62256C A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 . I/O1 . . I/O8 .. COLUMN I/O I/O2 I/O3 Vss . . . . I/O CONTROL . . . COLUMN DECODER LOGIC CONTROL PDIP/SOP OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 A10 CE WE OE A10 A9 A11 A2 A1 A0 A11 A9 A8 A13 CE I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 PIN DESCRIPTION SYMBOL A0 - A14 I/O1 - I/O8 CE WE OE VCC VSS WE DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground Vcc A14 A12 A7 A6 A5 A4 A3 UT62256C 22 21 20 19 18 17 16 15 STSOP ____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec0 SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to +7.0 0 to +70 -65 to +150 1 50 260 UNIT V W mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: H = VIH, L=VIL, X = Don't care. CE H L L L OE X H L X WE X H H L I/O OPERATION High - Z High - Z DOUT DIN SUPPLY CURRENT ISB, ISB1 ICC ICC ICC DC ELECTRICAL CHARACTERISTICS (VCC = 5V10%, TA = 0 to 70) PARAMETER SYMBOL Input High Voltage VIH Input Low Voltage VIL Input Leakage Current ILI Output Leakage ILO Current Output High Voltage Output Low Voltage Operating Power Supply Current VOH VOL ICC ICC1 ICC2 Standby Power Supply Current ISB ISB1 ISB ISB1 TEST CONDITION MIN. TYP. MAX. UNIT 2.2 VCC+0.5 V - 0.5 0.8 V -1 1 A -1 1 A VSS VIN VCC VSS VI/O VCC CE =VIH or OE = VIH or WE = VIL IOH= - 1mA IOL= 4mA - 35 CE = VIL , II/O = 0mA ,Cycle=Min. - 70 CE = 0.2V; II/O = 0mA Tcycle other pins at 0.2V or =500ns Tcycle VCC-0.2V =1ms normal CE =VIH CE VCC-0.2V CE =VIH CE VCC-0.2V -L/-LL -L -LL 2.4 - 40 30 1 0.3 2 1 0.4 50 40 20 10 10 5 3 100 50 V V mA mA mA mA mA mA mA A A ____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C CAPACITANCE (TA=25, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 8 10 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL = 100pF, IOH/IOL = -1mA/4mA AC ELECTRICAL CHARACTERISTICS (VCC = 5V10% , TA = 0 to 70) (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z SYMBOL UT62256C-35 MIN. MAX. UT62256C-70 MIN. MAX. UNIT tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH SYMBOL 35 10 5 5 35 35 25 25 25 - 70 10 5 5 70 70 35 35 35 - ns ns ns ns ns ns ns ns ns UNIT UT62256C-35 MIN. MAX. UT62256C-70 MIN. MAX. tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* 35 30 30 0 25 0 20 0 5 - 15 70 60 60 0 50 0 30 0 5 - 25 ns ns ns ns ns ns ns ns ns ns *These parameters are guaranteed by device characterization, but not production tested. _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2,4) tRC Address tAA tOH tOH DOUT Data Valid READ CYCLE 2 ( CE and OE Controlled) (1,3,5,6) tRC Address tAA CE tACE OE tOE tCLZ DOUT tOLZ High-z tCHZ tOHZ tOH Data valid High-Z Notes : 1. WE is HIGH for read cycle. 2. Device is continuously selected CE =VIL. 3. Address must be valid prior to or coincident with CE transition; otherwise tAA is the limiting parameter. 4. OE is LOW. 5. tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured 500mV from steady state. 6. At any given temperature and voltage condition, tCHZ is less than tCLZ, tOHZ is less than tOLZ. _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C WRITE CYCLE 1 ( WE Controlled) (1,2,3,5) tWC Address tAW CE tAS WE tCW tWP tWR tWHZ DOUT High-Z tOW (4) (4) tDW tDH Data Valid DIN WRITE CYCLE 2 ( CE Controlled) (1,2,5) tWC Address tAW CE tAS tCW tWP tWR WE tWHZ DOUT High-Z (4) tDW tDH DIN Data Valid Notes : 1. WE or CE must be HIGH during all address transitions. 2. A write occurs during the overlap of a low CE and a low WE . 3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input signals must not be applied. 5. If the CE LOW transition occurs simultaneously with or after WE outputs remain in a high impedance state. 6. tOW and tWHZ are specified with CL = 5pF. LOW transition, the Transition is measured 500mV from steady state. _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C DATA RETENTION CHARACTERISTICS (TA = 0 to 70) PARAMETER Vcc for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL TEST CONDITION VDR CE VCC-0.2V IDR Vcc=3V tCDR tR CE VCC-0.2V See Data Retention Waveforms (below) MIN. TYP. MAX. UNIT 2.0 5.5 V -L - LL 0 tRC* 1 0.5 50 20 A A ns ns DATA RETENTION WAVEFORM Data Retention Mode VCC 4.5V VDR 2V CE 4.5V tR tCDR VSS CE VCC -0.2V _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C PACKAGE OUTLINE DIMENSION 28 pin 600 mil PDIP PACKAGE OUTLINE DIMENSION UNIT SYMBOL C A1 A2 B B1 c D E E1 e eB L S Q1 INCH(BASE) 0.010 (MIN) 0.1500.005 0.020 (MAX) 0.055 (MAX) 0.012 (MAX) 1.430 (MAX) 0.6 (TYP) 0.52 (MAX) 0.100 (TYP) 0.625 (MAX) 0.180(MAX) 0.06 (MAX) 0.08(MAX) o 15 (MAX) MM(REF) 0.254 (MIN) 3.8100.127 0.508(MAX) 1.397(MAX) 0.304 (MAX) 36.322 (MAX) 15.24 (TYP) 13.208 (MAX) 2.540(TYP) 15.87 (MAX) 4.572(MAX) 1.524 (MAX) 2.032(MAX) o 15 (MAX) _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C 28 pin 330 mil SOP PACKAGE OUTLINE DIMENSION UNIT SYMBOL B C E A A1 A2 b c D E E1 e L L1 S y INCH(BASE) 0.120 (MAX) 0.002(MIN) 0.0980.005 0.0016 (TYP) 0.010 (TYP) 0.728 (MAX) 0.340 (MAX) 0.4650.012 0.050 (TYP) 0.05 (MAX) 0.0670.008 0.047 (MAX) 0.003(MAX) o o 0 10 MM(REF) 3.048 (MAX) 0.05(MIN) 2.4890.127 0.406(TYP) 0.254(TYP) 18.491 (MAX) 8.636 (MAX) 11.8110.305 1.270(TYP) 1.270 (MAX) 1.702 0.203 1.194 (MAX) 0.076(MAX) o o 0 10 _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C 28 pin 8x13.4mm STSOP PACKAGE OUTLINE DIMENSION UNIT SYMBOL Note E dimension is not including end flash the total of both sides' end flash is not above 0.3mm. 2 2 2 2 5 A A1 A2 b c Db E e D L L1 y INCH(BASE) 0.047 (MAX) 0.0040.002 0.0390.002 0.006 (TYP) 0.010 (TYP) 0.4650.004 0.3150.004 0.022 (TYP) 0.5280.008 0.0200.004 0.03150.004 0.08(MAX) o o 0 5 MM(REF) 1.20 (MAX) 0.100.05 1.000.05 0.15(TYP) 0.254(TYP) 11.800.10 8.000.10 0.55(TYP) 13.400.20 0.500.10 0.800.10 0.003(MAX) o o 0 5 _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C ORDERING INFORMATION PART NO. UT62256CPC-70 UT62256CPC-70L UT62256CPC-70LL UT62256CSC-35 UT62256CSC-35L UT62256CSC-35LL UT62256CSC-70 UT62256CSC-70L UT62256CSC-70LL UT62256CLS-35L UT62256CLS-35LL UT62256CLS-70L UT62256CLS-70LL ACCESS TIME (ns) 70 70 70 35 35 35 70 70 70 35 35 70 70 STANDBY CURRENT (A) 5 mA 100 A 40 A 5 mA 100 A 40 A 5 mA 100 A 40 A 100 A 50 A 100 A 40 A PACKAGE 28PIN PDIP 28PIN PDIP 28PIN PDIP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN SOP 28PIN STSOP 28PIN STSOP 28PIN STSOP 28PIN STSOP _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C REVISION HISTORY REVISION REV. 0.9 REV. 1.0 DESCRIPTION 1. Original. 1. The test condition of ICC1 and ICC2 have been revised. 2. The symbols CE#,OE# and WE# are revised as CE , OE and WE 3. The ordering information of PACKAGE ,STSOP-1 is revised as STSOP. DATE Apr. 26,2001 MAY. 14,2001 _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 11 UTRON Rev. 1.0 32K X 8 BIT LOW POWER CMOS SRAM UT62256C THIS PAGE IS LEFT BLANK INTENTIONALLY. _____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80027 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 12 |
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